A Low-Memory Address Translation Mechanism for Flash-Memory Storage Systems

نویسندگان

  • Chin-Hsien Wu
  • Chen-Kai Jan
  • Tei-Wei Kuo
چکیده

While flash-memory has been widely adopted for various embedded systems, the performance of address translation has become a critical issue for the design of flash translation layers. The aim of this paper is to improve the performance of existing designs by proposing a caching mechanism for efficient address translation. A replacement strategy with low-time complexity and low-memory requirements is proposed to cache the most recently used logical addresses. According to the experiments, the proposed method has shown its efficiency in the reducing of the address translation time.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A space-efficient flash translation layer for CompactFlash systems

Flash memory is becoming increasingly important as nonvolatile storage for mobile consumer electronics due to its low power consumption and shock resistance. However, it imposes technical challenges in that a write should be preceded by an erase operation, and that this erase operation can be performed only in a unit much larger than the write unit. To address these technical hurdles, an interm...

متن کامل

Virtually Separable Block Management in Flash Storage System

File systems treats Flash storage device as a traditional storage media with their logical address. However inside the Flash storage device, Flash Translation Layer (FTL) remaps logical address to physical address to hide physical limitation of Flash memory cells. Due to the address translation, intentional logical separation of file system’s layout does not directly applied to physical separat...

متن کامل

A Real-Time Garbage Collection Mechanism for Flash-Memory Storage Systems in Embedded Systems

Flash memory technology is becoming critical in building embedded systems applications because of its shock-resistant, power economic, and non-volatile nature. Because flash memory is a write-once and bulkerase medium, a translation layer and a garbage collection mechanism is needed to provide applications a transparent storage service. In this paper, we propose a real-time garbage collection m...

متن کامل

A Mixed Flash Translation Layer Structure for SLC-MLC Combined Flash Memory System

NAND flash memory is a nonvolatile storage that is often used for its advantages of small size, non-mechanical, shock resistance, and low power consumption. With the recent drop in its price, NAND flash memory is on the verge of taking place of hard disk drive. Depending on the number of bits stored in a single cell, flash memory can be divided into SLC (single-level cell) NAND and MLC (multi-l...

متن کامل

Prediction of Elapsed Time based Wear Leveling for NAND Flash Memory in Embedded Systems

In recent years, many storage systems use NAND flash memory increasingly as their secondary storages. NAND flash memory has non-volatile memory characteristics with low power, low latency and high reliability. On the other hand, NAND flash memory has different issue, compared to existing secondary storages, which is the characteristics such as erase-before-write, low endurance and different ope...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • J. Inf. Sci. Eng.

دوره 27  شماره 

صفحات  -

تاریخ انتشار 2011